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AOD425 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD425 uses advanced trench technology to provide excellent R DS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen Free*
Features
VDS (V) = -30V ID = -20A (VGS = -10V) RDS(ON) < 17m (VGS = -10V) RDS(ON) < 35m (VGS = -5V) ESD Protected! 100% Rg Tested!
Top View D
TO-252 D-PAK
Bottom View
D
G
S G S
G
S
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current F Pulsed Drain Current
C
Maximum -30 25 -40 -30 -70 -9 -7 50 25 2.3 1.5 -55 to 175
Units V V A
VGS TC=25C TC=100C ID IDM
Continuous Drain TA=25C TA=70C Current
TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
IDSM
PD PDSM TJ, TSTG
A
W W C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 18 44 2.4
Max 22 55 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AOD425
Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250uA, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-5V, ID=-20A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-20A IS=-1A,VGS=0V TJ=125C -1.5 -70 13.5 18.5 27 27 -0.72 -1 -40 1760 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 360 255 6.4 30 VGS=-10V, VDS=-15V, ID=-20A 11 7 8 11.5 VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 IF=-20A, dI/dt=100A/s 8 35 18.5 24 16 30 8 38 2200 17 24 35 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m -2.45 Min -30 -1 -5 10 -3.5 Typ Max Units V A uA V A
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s
A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on t<10s R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. A *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 60 50 ID(A) 40 30 20 10 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 -5V -4.5V 5 VGS=-4V 0 2 2.5 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 3 5 25C 15 ID(A) 25 -10V VDS=-5V 125C
20
10
40.0
1.8 ID=-20A Normalized On-Resistance
30.0 RDS(ON) (m ) VGS=-5V 20.0
1.6 VGS=-10V 1.4
1.2
VGS=-5V
10.0 VGS=-10V 0.0 0 5 10 15 20 25
1
0.8 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 ID=-20A 40 125C RDS(ON) (m )
1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05
125C
30
25C
TC=100C
20
TA=25C
-55 to 175
10 25C
0 0 5 10 15 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
0.2
1.0
Alpha & Omega Semiconductor, Ltd.
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-15V ID=-20A Capacitance (pF) 2500 Ciss
8
2000
VGS (Volts)
6
1500
4
1000 Coss 500 Crss 0
2
0 0 5 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 10 35
0
10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
5
25
1000
100 TJ(Max)=175C TC=25C RDS(ON) limited DC TJ(Max)=175C TC=25C 10s Power (W) 100s 1ms 80
100 ID (Amps)
10
60
1
10ms
0.1
40
0.01 0.01
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.1
100
20 0.0001
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
10 Z JC Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJC.RJC RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TC=100C TA=25C
0.1 PD
-55 to 175
Ton Single Pulse T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 Current rating ID(A) 0 25 50 75 100 125 150 175 40 30 20 10 0 TCASE (C) Figure 13: Power De-rating (Note B) 50 45 Power Dissipation (W) 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
100 80 Power (W) 60 40 20 0 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 Z JA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=55C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 100 1000
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & W aveform s
RL Vds Vgs Vgs Rg D UT
VDC
Vgs Vds
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
Charge
t on td(on) tr t d(off) t off tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
+ Vdd -Vds
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